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TRANSISTOR J48 NTE 2998 ELECTRONICS PARTS

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TRANSISTOR

J48 ( NTE2998 )

G

NTE2998

MOSFET

P−Channel, Enhancement Mode

High Speed Switch

Features:

High Speed Switching

High Voltage

High Energy Rating

Enhancement Mode

Integral Protection Diode

Absolute Maximum Ratings: (TC = +25?C unless otherwise specified)

Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ?14V

Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Body Drain Diode, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A

Total Power Dissipation (TC = +25?C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W

Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150?C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55? to +150?C

Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0?C/W

Electrical Characteristics: (TC = +25?C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Static Characteristics

Drain−Source Breakdown Voltage BVDSX VGS = 10V, ID = 10mA 200 − − V

Gate−Source Breakdown Voltage BVGSS VDS = 0, IG = ?100μA ?14 − − V

Gate−Source Cut−Off Voltage VGS(OFF) VDS = 10V, ID = 100mA 0.15 − 1.5 V

Drain−Source Saturation Voltage VDS(SAT) VGD = 0, ID = 8A, Note 1 − − 12 V

Drain−Source Cut−Off Current IDSX VGS = 10V, VDS = 200V − − 10 mA

Forward Transfer Admittance yfs VDS = 10V, ID = 3A, Note 1 0.7 − 2.0 S

Note 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%.

Electrical Characteristics (Cont?d): (TC = +25?C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Dynamic Characteristics

Input Capacitance Ciss VDS = 10V, f = 1MHz − 734 − pF

Output Capacitance Coss − 300 − pF

Reverse Transfer Capacitance Crss − 26 − pF

Turn−On Time ton VDS = 20V, ID = 5A − 120 − ns

Turn−Off Time toff − 60 − ns

.875 (22.2)

Dia Max

.665 (16.9)

.430

(10.92)

Seating

Plane

.312 (7.93) Min .040 (1.02)

.135 (3.45) Max

.350 (8.89)

Drain

Gate Source/Case

.215 (5.45)

.525 (13.35) R Max

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

1.187 (30.16)


NOTE:

ALL ELECTRONICS ARE UNTESTED

SOLD AS IS