TRANSISTOR
J48 ( NTE2998 )
G
NTE2998
MOSFET
P−Channel, Enhancement Mode
High Speed Switch
Features:
High Speed Switching
High Voltage
High Energy Rating
Enhancement Mode
Integral Protection Diode
Absolute Maximum Ratings: (TC = +25?C unless otherwise specified)
Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
Gate−Source Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ?14V
Continuous Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Body Drain Diode, ID(PK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Power Dissipation (TC = +25?C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Maximum Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150?C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55? to +150?C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0?C/W
Electrical Characteristics: (TC = +25?C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Static Characteristics
Drain−Source Breakdown Voltage BVDSX VGS = 10V, ID = 10mA 200 − − V
Gate−Source Breakdown Voltage BVGSS VDS = 0, IG = ?100μA ?14 − − V
Gate−Source Cut−Off Voltage VGS(OFF) VDS = 10V, ID = 100mA 0.15 − 1.5 V
Drain−Source Saturation Voltage VDS(SAT) VGD = 0, ID = 8A, Note 1 − − 12 V
Drain−Source Cut−Off Current IDSX VGS = 10V, VDS = 200V − − 10 mA
Forward Transfer Admittance yfs VDS = 10V, ID = 3A, Note 1 0.7 − 2.0 S
Note 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont?d): (TC = +25?C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Dynamic Characteristics
Input Capacitance Ciss VDS = 10V, f = 1MHz − 734 − pF
Output Capacitance Coss − 300 − pF
Reverse Transfer Capacitance Crss − 26 − pF
Turn−On Time ton VDS = 20V, ID = 5A − 120 − ns
Turn−Off Time toff − 60 − ns
.875 (22.2)
Dia Max
.665 (16.9)
.430
(10.92)
Seating
Plane
.312 (7.93) Min .040 (1.02)
.135 (3.45) Max
.350 (8.89)
Drain
Gate Source/Case
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
1.187 (30.16)
NOTE:
ALL ELECTRONICS ARE UNTESTED
SOLD AS IS