TRANSISTOR PNP NTE 385 ELECTRONICS PARTS

TRANSISTOR

NTE 385

Features:

• Fast Turn-Off Times

Collector-Emitter Voltage, V_CEO(sus) 400V Collector-Emitter Voltage (V_BE = -1.5V), V_CEX 850V Emitter-Base Voltage, V_EB 7V Collector Current, I_C
Continuous
Peak (Note 1)
Overload 15A
30A
60A Base Current, I_B
Continuous
Peak (Note 1) 5A
20A Total Power Dissipation (T_C = +25?C), P_D 175W Derate above 25?C 1.0W/?C Total Power Dissipation (T_C = +100?C), P_D 100W Operating Junction Temperature Range, T_J -65? to +200?C Storage Temperature Range, T_stg -65? to +200?C Maximum Thermal Resistance, Junction-to-Case, R_thJC 1.0?C/W Lead Temperature (During Soldering, 1/8" from case, 5sec), T_L +275?C

Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle

Electrical Characteristics: (T_C = +25?C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics (Note 2) Collector-Emitter Sustaining Voltage V_CEO(sus) I_C = 200mA, I_B = 0, L = 25mH 400 - - V Collector Cutoff Current I_CEX V_CEX = 850V, V_BE(off) = 1.5V - - 0.2 mA V_CEX = 850V, V_BE(off) = 1.5V, T_C = +125?C - - 2.5 mA I_CER V_CE = 850V, R_BE = 10 Ohm - - 0.5 mA V_CE = 850V, R_BE = 10 Ohm, T_C = +100?C - - 3.0 mA Emitter Cutoff Current I_EBO V_BE = 5V, I_C = 0 - - 0.1 mA Emitter-Base Breakdown Voltage V_(BR)EBO I_E = 50mA, -I_C = 0 7 - - V ON Characteristics (Note 2) DC Current Gain h_FE V_CE = 5V, I_C = 10A 8 - - Collector-Emitter Saturation Voltage V_CE(sat) I_C = 10A, I_B = 2A - - 1.5 V I_C = 10A, I_B = 2A, T_C = +100?C - - 2.0 V I_C = 8A, I_B = 1.6A - - 1.5 V I_C = 8A, I_B = 1.6A, T_C = +100?C - - 2.0 V Base-Emitter Saturation Voltage V_BE(sat) I_C = 10A, I_B = 2A - - 1.6 V I_C = 10A, I_B = 2A, T_C = +100?C - - 1.6 V Dynamic Characteristics Output Capacitance C_ob V_CB = 10V, I_E = 0, f = 1kHz - - 350 pF Switching Characteristics (Resistive Load) Delay Time t_d V_CC = 300V, I_C = 10A, I_B = 2A, t_p = 30?s, Duty Cycle BE(off) = 5V - 0.1 0.2 ?s Rise Time t_r - 0.4 0.7 ?s Storage Time t_s - 1.3 2.0 ?s Fall Time t_f - 0.2 0.4 ?s Switching Characteristics (Inductive Load, Clamped) Storage Time t_sv I_C = 10A, I_B1 = 2A, T_C = +25?C - 1.3 - ?s Fall Time t_fi - 0.06 - ?s Storage Time t_sv I_C = 10A, I_B1 = 2A, T_C = +100?C - 1.5 2.5 ?s Crossover Time t_c - 0.3 0.6 ?s Fall Time t_fi - 0.17 0.35 ?s

Note 2. Pulse test: Pulse Width = 300?s. Duty Cycle cl = 300V, V_BE(off) = 5V, L_C = 180?H.

THIS SALE IS FOR 1 EACH

NOTE:

ALL ELECTRONICS ARE UNTESTED

SOLD AS IS